인천대학교 인디고클랫폼 인천대학교 기술지원허브

This invention presents a plasma-free hot-wire radical atomic layer etching process for Al₂O₃ thin films. The process sequentially modifies the Al₂O₃ surface using hexafluoroacetylacetone (Hhfac) and removes the modified layer using neutral atomic hydrogen or H/NHₓ radicals generated by dissociating H₂ or NH₃ on a heated tungsten filament. The cyclic and self-limiting surface reactions enable angstrom-scale thickness control while minimizing ion-induced plasma damage. The process also improves the surface smoothness of the remaining Al₂O₃ film and is applicable to defect-sensitive interfaces and complex three-dimensional semiconductor structures